ATF-13736 |
RFQ for ATF-13736 Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| ATF-13736 | - | - | 03+ |
The ATF-13736 is a high performance gallium arsenide Schottky-barrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 2-16 GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride passivation assure a rugged,reliable device.
Features |
| * Low Noise Figure:1.8 dB Typical at 12 GHz* High Associated Gain:9.0 dB Typical at 12 GHz* High Output Power:17.5 dB Typical at 12 GHz* Cost Effective Ceramic Microstrip Package* Tape-and-Reel Packaging Option Available[1] |
| Symbol | Parameter | Units | Absolute Maximum[1] |
| VDS | Drain-Source Voltage | V | +5 |
| VGS | Gate-Source Voltage | V | -4 |
| VGD | Gate-Drain Voltage | V | -6 |
| IDS | Drain Current | mA | IDSS |
| PT | Power Dissipation [2,3] | mW | 225 |
| TCH | Channel Temperature | °C | 175 |
| TSTG | Storage Temperature[4] |
°C | -65 to +175 |
